| производитель | номер детали | датащи | подробное описание детали |
NEC |
2SJ210
|
365Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|
Guangdong Kexin Industr... |
2SJ210
|
42Kb/1P |
MOS Fied Effect Transistor
|
Renesas Technology Corp |
2SJ210
|
343Kb/7P |
MOS FIELD EFFECT TRANSISTOR
|
Guangdong Kexin Industr... |
2SJ210
|
998Kb/3P |
P-Channel MOSFET
|
|
2SJ210-3
|
1Mb/3P |
P-Channel MOSFET
|
VBsemi Electronics Co.,... |
2SJ210-T1B-A
|
980Kb/7P |
P-Channel 60 V (D-S) MOSFET
|
Renesas Technology Corp |
2SJ210C
|
162Kb/8P |
P-CHANNEL MOSFET FOR SWITCHING
|
|
2SJ210C-T1B-A
|
162Kb/8P |
P-CHANNEL MOSFET FOR SWITCHING
|
|
2SJ210C-T1B-AT
|
162Kb/8P |
P-CHANNEL MOSFET FOR SWITCHING
|
Guangdong Kexin Industr... |
2SJ210
|
998Kb/3P |
P-Channel MOSFET
|
|
2SJ211-3
|
1Mb/3P |
P-Channel MOSFET
|
VBsemi Electronics Co.,... |
2SJ211-T1B-A
|
487Kb/8P |
P-Channel 100-V (D-S) MOSFET
|
Guangdong Kexin Industr... |
2SJ211
|
1Mb/3P |
P-Channel MOSFET
|
NEC |
2SJ212
|
309Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|
Guangdong Kexin Industr... |
2SJ212
|
44Kb/1P |
MOS Fied Effect Transistor
|
Renesas Technology Corp |
2SJ212
|
535Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1990 |
Guangdong Kexin Industr... |
2SJ212
|
1Mb/4P |
P-Channel MOSFET
|
NEC |
2SJ213
|
304Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|
Guangdong Kexin Industr... |
2SJ213
|
44Kb/1P |
MOS Fied Effect Transistor
|
Renesas Technology Corp |
2SJ213
|
529Kb/8P |
MOS FIELD EFFECT TRANSISTOR
1991 |
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