| производитель | номер детали | датащи | подробное описание детали |
 Hitachi Semiconductor |
2SH20
|
43Kb/8P |
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH20
|
146Kb/4P |
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH21
|
43Kb/8P |
Silicon N-Channel IGBT
|
 Toshiba Semiconductor |
2SH21
|
146Kb/4P |
SILICON P EMITTER PLANAR TYPE
|
 Hitachi Semiconductor |
2SH22
|
42Kb/8P |
Silicon N-Channel IGBT
|
|
2SH26
|
43Kb/8P |
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH26
|
171Kb/10P |
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH27
|
42Kb/8P |
Silicon N Channel IGBT High Speed Power Switching
|
 Renesas Technology Corp |
2SH27
|
171Kb/10P |
Silicon N Channel IGBT High Speed Power Switching
|
|
2SH28
|
171Kb/10P |
Silicon N Channel IGBT High Speed Power Switching
|
 Hitachi Semiconductor |
2SH28
|
43Kb/8P |
Silicon N Channel IGBT High Speed Power Switching
|
 Toshiba Semiconductor |
2SH 20
|
146Kb/4P |
SILICON P EMITTER PLANAR TYPE
|
 Adam Technologies, Inc. |
2SH-B-XX-TR
|
113Kb/1P |
SHROUDED HEADER
|
|
2SH-B-XX-TS
|
94Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-MTR
|
77Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-MTR-NK-094
|
80Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-MTS
|
76Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-TR
|
41Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-TR-SMT
|
102Kb/1P |
SHROUDED HEADER
|
|
2SH-C-XX-TS
|
93Kb/1P |
SHROUDED HEADER
|