2SC3279 датащи, PDF

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC3279	163Kb/3P	NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
Toshiba Semiconductor	2SC3279	335Kb/3P	Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
SeCoS Halbleitertechnol...	2SC3279	312Kb/2P	NPN Transistor Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	2SC3279	295Kb/2P	NPN Plastic Encapsulated Transistor
SHENZHEN YONGERJIA INDU...	2SC3279	125Kb/1P	TRANSISTOR (NPN)
Jiangsu Changjiang Elec...	2SC3279	501Kb/3P	TO-92 Plastic-Encapsulate Transistors
SHENZHEN KOO CHIN ELECT...	2SC3279	311Kb/2P	TRANSISTOR (NPN)
Micro Commercial Compon...	2SC3279-L	266Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-L	364Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-L	364Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-M	266Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-M	364Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-N	266Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-N	364Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-P	266Kb/3P	NPN Silicon Epitaxial Transistors
	2SC3279-P	364Kb/3P	NPN Silicon Epitaxial Transistors
Toshiba Semiconductor	2SC3279	335Kb/3P	Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
SeCoS Halbleitertechnol...	2SC3279	295Kb/2P	NPN Plastic Encapsulated Transistor
SeCoS Halbleitertechnol...	2SC3279	295Kb/2P	NPN Plastic Encapsulated Transistor

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