| производитель | номер детали | датащи | подробное описание детали |
Toshiba Semiconductor |
1SS300
|
127Kb/2P |
DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)
|
|
1SS300
|
220Kb/4P |
Ultra High Speed Switching Applications
|
Guangdong Kexin Industr... |
1SS300
|
45Kb/1P |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor |
1SS300
|
220Kb/4P |
Ultra High Speed Switching Applications
|
|
1SS300
|
231Kb/4P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
1SS301
|
127Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
List of Unclassifed Man... |
1SS301
|
124Kb/2P |
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
|
Toshiba Semiconductor |
1SS301
|
211Kb/3P |
Ultra High Speed Switching Applications
|
Guangdong Kexin Industr... |
1SS301
|
43Kb/1P |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor |
1SS301
|
195Kb/3P |
Ultra High Speed Switching Applications
|
SEMTECH ELECTRONICS LTD... |
1SS301CCW
|
180Kb/2P |
SILICON EPITAXIAL PLANAR DIODE
|
Toshiba Semiconductor |
1SS301TE85LF
|
195Kb/3P |
Ultra High Speed Switching Applications
|
|
1SS301
|
211Kb/3P |
Ultra High Speed Switching Applications
|
|
1SS302
|
126Kb/2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
|
1SS302
|
215Kb/3P |
Ultra High Speed Switching Applications
|
Guangdong Kexin Industr... |
1SS302
|
43Kb/1P |
ULTRA HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor |
1SS302
|
199Kb/3P |
Ultra High Speed Switching Applications
|
|
1SS302
|
199Kb/3P |
Ultra High Speed Switching Applications
|
Nanjing International G... |
1SS302
|
1Mb/4P |
SOT-323 Plastic-Encapsulate Diodes
|
Toshiba Semiconductor |
1SS302A
|
170Kb/6P |
Switching Diodes Silicon Epitaxial Planar
|
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