1G-AE3-R датащи, PDF

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	2SK2751G-AE3-R	207Kb/4P	N-CHANNEL JUNCTION FET
	BAS21G-AE3-R	136Kb/3P	GENERAL PURPOSE DIODES
	BAS21G-AE3-R	164Kb/3P	GENERAL PURPOSE DIODES
	LL431G-AE3-R	177Kb/5P	PROGRAMMABLE PRECISION REFERENCE
	LL431G-AE3-R	221Kb/5P	PROGRAMMABLE PRECISION REFERENCE
	LL431G-AE3-R	251Kb/5P	PROGRAMMABLE PRECISION REFERENCE
	MMBT4401G-AE3-R	274Kb/6P	NPN GENERAL PURPOSE AMPLIFIER
	SK1901G-AE3-R	222Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	SK1901G-AE3-R	196Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	SK1901G-AE3-R	218Kb/8P	HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
	TL431G-AE3-R	242Kb/7P	PROGRAMMABLE PRECISION REFERENCE
	TL431G-AE3-R	273Kb/7P	4PROGRAMMABLE PRECISION REFERENCE
	TL431G-AE3-R	336Kb/6P	PROGRAMMABLE PRECISION REFERENCE
	UF601G-AE3-R	173Kb/3P	0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
	UF601G-AE3-R	194Kb/3P	N-CHANNEL DEPLETION-MODE POWER MOSFET
	UHS41G-AE3-R	112Kb/4P	HALL-EFFECT LATCHED SENSOR
	ULVH431G-AE3-R	170Kb/6P	LINEAR INTEGRATED CIRCUIT
	ULW2091G-AE3-R	403Kb/12P	LINEAR INTEGRATED CIRCUIT
	UT2301G-AE3-R	184Kb/4P	2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
VBsemi Electronics Co.,...	UT2301G-AE3-R	1Mb/9P	P-Channel 20-V (D-S) MOSFET

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