| производитель | номер детали | датащи | подробное описание детали |
 Vishay Siliconix |
VB20100C
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
31-Jul-08
|
|
VB20100C
|
161Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB20100C
|
164Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
16-Aug-13
|
|
VB20100C
|
151Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-Aug-13
|
|
VB20100C
|
104Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018
|
 Inchange Semiconductor ... |
VB20100C
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20100C-E3
|
167Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
13-Dec-16
|
|
VB20100C-E3
|
214Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
18-Jun-2018
|
 Inchange Semiconductor ... |
VB20100C-E3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20100C-E3-4W
|
161Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB20100C-E3-8W
|
161Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB20100C-E3/4W
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
31-Jul-08
|
|
VB20100C-E3/8W
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
31-Jul-08
|
|
VB20100C-M3
|
100Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
03-Jan-17
|
|
VB20100C-M3
|
78Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13
|
|
VB20100CHM3
|
100Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
03-Jan-17
|
|
VB20100C
|
104Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018
|