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производитель номер детали датащи подробное описание детали Shenzhen Huazhimei Semi... HM3N90F 957Kb/10P Silicon N-Channel Power MOSFET Search Partnumber : Start with "HM3N90F" - Total : 112 ( 1/6 Page) Shenzhen Huazhimei Semi... HM3N90I 920Kb/10P Silicon N-Channel Power MOSFET HM3N120A 616Kb/9P Power switch circuit of adaptor and charger HM3N120F 430Kb/9P Electric welder, Inverter HM3N150A 364Kb/6P Power switch circuit of adaptor and charger. HM3N150F 427Kb/6P N-channel Enhanced VDMOSFETs HM3N18A 430Kb/6P N-Channel Enhancement Mode Power MOSFET HM3N25I 870Kb/10P Silicon N-Channel Power MOSFET HM3N30PR 1Mb/10P Silicon N-Channel Power MOSFET HM3N40PR 1Mb/10P Silicon N-Channel Power MOSFET HM3N40R 889Kb/10P Silicon N-Channel Power MOSFET HM3N70 364Kb/5P N - ChannelPower MOSFET HM3N80 956Kb/10P SiliconN - ChannelPowerMOSFET List of Unclassifed Man... HM3-6116-2 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116-5 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116-6 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116-9 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116B-2 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116B-5 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM HM3-6116B-6 227Kb/8P 2K x 8 GENERAL PURPOSE CMOS SRAM

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дистрибьютор номер детали производитель датащи подробное описание детали Buy Now Element14 HM36-12111R4LFTR TT ELECTRONICS / BI TECHNOLOGIES INDUCTOR, 1.4UH, 20A; Inductance:1.4µH; RMS Current (Irms):-; Inductor Construction:Shielded; Satura... HM36-12111R4LFTR TT ELECTRONICS / BI TECHNOLOGIES INDUCTOR, 1.4UH, 20A; Inductance:1.4µH; RMS Current (Irms):-; Inductor Construction:Shielded; Satura...

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