быстрый вызов   DFE201610C(4) резутат. соответствуя, Like  DFE201610C(3) начиная   No Data канчевая   No Data включая   No Data производитель

производитель номер детали датащи подробное описание детали Murata Manufacturing Co... DFE201610C 171Kb/1P The use of Flat wire for Low DC resistance Texas Instruments DFE201610C 3Mb/63P TPS6128xD/E Low-IQ, Wide-Voltage Battery Front-End DC/DC Converter for Single-Cell Li-Ion, Ni-Rich, Si-Anode Applications REVISED JUNE 2023 TOKO, Inc DFE201610C 79Kb/1P Metal Alloy Inductors DFE201610C 216Kb/1P Metal Alloy Inductors Search Partnumber : Start with "DFE201610C" - Total : 68 ( 1/4 Page) TOKO, Inc DFE201610C 216Kb/1P Metal Alloy Inductors DFE201610E 233Kb/1P The use of Flat wire for Low DC resistance DFE201610E-100M 233Kb/1P The use of Flat wire for Low DC resistance DFE201610E-100M 228Kb/1P Metal Alloy Inductors Murata Manufacturing Co... DFE201610E-100M 982Kb/2P Inductor DFE201610E-100M 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% DFE201610E-100M# 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% DFE201610E-100M 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% TOKO, Inc DFE201610E-1R0M 233Kb/1P The use of Flat wire for Low DC resistance DFE201610E-1R0M 228Kb/1P Metal Alloy Inductors Murata Manufacturing Co... DFE201610E-1R0M 982Kb/2P Inductor DFE201610E-1R0M 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% DFE201610E-1R0M# 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% DFE201610E-1R0M 2Mb/2P Rated current (Isat) is specified when the decrease of the initial inductance value at 30% TOKO, Inc DFE201610E-1R5M 233Kb/1P The use of Flat wire for Low DC resistance DFE201610E-1R5M 228Kb/1P Metal Alloy Inductors

DFE201610C датащи, PDF [дистрибьютор]

дистрибьютор номер детали производитель датащи подробное описание детали Buy Now Element14 DFE201610E-100M=P2 MURATA INDUCTOR, 10UH, 0.75A, 0806, SHIELDED; Inductance:10µH; RMS Current (Irms):-; Inductor Construction:... DFE201610E-100M=P2 MURATA INDUCTOR, 10UH, 0.75A, 0806, SHIELDED; Inductance:10µH; RMS Current (Irms):-; Inductor Construction:...

DFE201610C дистрибьютор