| производитель | номер детали | датащи | подробное описание детали |
Infineon Technologies A... |
BAW101
|
429Kb/3P
|
Silicon Switching Diode
Sep-24-2003
|
|
BAW101
|
62Kb/5P
|
Silicon Switching Diode
2007-04-20
|
NXP Semiconductors |
BAW101
|
136Kb/9P
|
High voltage double diode
2003 May 13
|
Diodes Incorporated |
BAW101
|
79Kb/4P
|
Fast Switching Speed
Rev erse
|
|
BAW101
|
277Kb/5P
|
DUAL SURFACE MOUNT SWITCHING DIODE
Rev erse
|
Siemens Semiconductor G... |
BAW101
|
61Kb/3P
|
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)
|
Central Semiconductor C... |
BAW101
|
152Kb/2P
|
DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES
|
Nexperia B.V. All right... |
BAW101
|
311Kb/10P
|
High voltage double diode
2003 May 13
|
Guangdong Kexin Industr... |
BAW101
|
38Kb/2P
|
Silicon Switching Diode Array
|
Shenzhen Luguang Electr... |
BAW101
|
160Kb/5P
|
High Voltage Double Diode
|
NXP Semiconductors |
BAW101-215
|
136Kb/9P
|
High voltage double diode
2003 May 13
|
Diodes Incorporated |
BAW101-7
|
79Kb/4P
|
Fast Switching Speed
Rev erse
|
|
BAW101-7
|
277Kb/5P
|
DUAL SURFACE MOUNT SWITCHING DIODE
Rev erse
|
|
BAW101Q
|
300Kb/4P
|
DUAL SURFACE MOUNT SWITCHING DIODE
Rev erse
|
|
BAW101Q-7
|
300Kb/4P
|
DUAL SURFACE MOUNT SWITCHING DIODE
Rev erse
|
NXP Semiconductors |
BAW101S
|
72Kb/10P
|
High voltage double diode
2003 May 13
|
|
BAW101S
|
128Kb/9P
|
High voltage double diode
2003 May 13
|
Diodes Incorporated |
BAW101S
|
97Kb/4P
|
HIGH VOLTAGE DUAL SWITCHING DIODE
DS32177 Rev. 4 - 2
|
Nexperia B.V. All right... |
BAW101S
|
225Kb/9P
|
High voltage double diode
1 October 2022
|
Guangdong Kexin Industr... |
BAW101S
|
42Kb/2P
|
High Voltage Double Diode
|
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