| производитель | номер детали | датащи | подробное описание детали |
 ATMEL Corporation |
ATC18
|
219Kb/12P
|
Cell-based ASIC
|
| Search Partnumber :
Start with "ATC18_06" -
Total : 104 ( 1/6 Page) |
 ATMEL Corporation |
ATC18M
|
115Kb/8P |
0.18 關m CMOS Cell-based ASIC for Military Use
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ATC18RHA
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268Kb/20P |
Rad. Hard 0.18 Um CMOS Cell-based ASIC for Space Use
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ATC18RHA
|
187Kb/22P |
Rad. Hard 0.18 關m CMOS Cell-based ASIC for Space Use
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ATC18RHA
|
187Kb/22P |
Rad. Hard 0.18 關m CMOS Cell-based ASIC for Space Use
|
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ATC18RHA
|
164Kb/16P |
Comprehensive Library of Standard Logic and I/O Cells
|
 ABB |
ATC100
|
279Kb/12P |
Switching - Loadbreak Switches IP65 Polycarbonate Enclosure
3/12 |
 List of Unclassifed Man... |
ATC100A
|
275Kb/6P |
Ultra-Stable Performance
|
 RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
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|
ATC100A0R2BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
 RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
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ATC100A0R7BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A100JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 List of Unclassifed Man... |
ATC100A100JW150XI
|
275Kb/6P |
Ultra-Stable Performance
|
|
ATC100A100JW150XT
|
275Kb/6P |
Ultra-Stable Performance
|
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ATC100A100JW150XTV
|
275Kb/6P |
Ultra-Stable Performance
|
 NXP Semiconductors |
ATC100A101JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 RF Micro Devices |
ATC100A120JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
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|
ATC100A150JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|