| производитель | номер детали | датащи | подробное описание детали |
 ON Semiconductor |
2SC3646
|
358Kb/7P
|
Bipolar Transistor High breakdown voltage and large current capacity
September, 2013
|
 Sanyo Semicon Device |
2SC3646
|
124Kb/4P
|
High-Voltage Switching Applications
|
|
2SC3646
|
113Kb/5P
|
High-Voltage Switching Applications
|
|
2SC3646
|
457Kb/7P
|
High-Voltage Switching Applications
|
 Guangdong Kexin Industr... |
2SC3646
|
511Kb/3P
|
High-Voltage Switching Applications
|
 Shenzhen Luguang Electr... |
2SC3646
|
1Mb/3P
|
High-Voltage Switching Applications
|
 Guangdong Kexin Industr... |
2SC3646-R
|
1Mb/3P
|
NPN Transistors
|
|
2SC3646-T
|
1Mb/3P
|
NPN Transistors
|
 ON Semiconductor |
2SC3646S-TD-E
|
358Kb/7P
|
Bipolar Transistor High breakdown voltage and large current capacity
September, 2013
|
|
2SC3646S-TD-E
|
358Kb/7P
|
Bipolar Transistor
September, 2013
|
|
2SC3646T-TD-E
|
358Kb/7P
|
Bipolar Transistor High breakdown voltage and large current capacity
September, 2013
|
|
2SC3646T-TD-E
|
358Kb/7P
|
Bipolar Transistor
September, 2013
|
 Guangdong Kexin Industr... |
2SC3646
|
1Mb/3P
|
NPN Transistors
|