H7N-R производитель, Function, датащи

производитель	номер детали	датащи Date Size	подробное описание детали	Rohs Pb Free Lifecycle	домашняя страница
Renesas Electronics Corporation	H7N0405LD		MOSFET, Switching; VDSS (V): 40; ID (A): 80; Pch : -; RDS (ON) typ. (ohm) @10V: 0.004; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0062]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5600; toff (µs) typ: -; Package: LDPAK (L)	compliant yes active
	H7N0405LM		MOSFET, Switching; VDSS (V): 40; ID (A): 80; Pch : -; RDS (ON) typ. (ohm) @10V: 0.004; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0062]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5600; toff (µs) typ: -; Package: LDPAK (S)- (2)	compliant yes active
	H7N0405LS		MOSFET, Switching; VDSS (V): 40; ID (A): 80; Pch : -; RDS (ON) typ. (ohm) @10V: 0.004; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0062]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5600; toff (µs) typ: -; Package: LDPAK (S)- (1)	compliant yes active
	H7N0405LS90TR-E		Nch Single Power MOSFET 40V 80A 5mohm LDPAK(S)-(1)/TO-263	compliant unknown contact_manufacturer
	H7N0607DS		MOSFET, Switching; VDSS (V): 60; ID (A): 20; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.026; RDS (ON) typ. (ohm) @4V[4.5V]: [0.04]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.065; Package: DPAK (S)	compliant yes active
	H7N1002LS-E		MOSFET N-CH 100V LDPAK	compliant yes active
	H7N1004DS		MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.025; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2800; toff (µs) typ: -; Package: DPAK (S)	compliant yes active
	H7N1005DL		MOSFET, Switching; VDSS (V): 100; ID (A): 12; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff (µs) typ: 0.042; Package: DPAK (L)- (2)	compliant yes active
	H7N1005DS		MOSFET, Switching; VDSS (V): 100; ID (A): 12; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff (µs) typ: 0.042; Package: DPAK (S)	compliant yes active
	H7N1005LD		MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff (µs) typ: 0.042; Package: LDPAK (L)	compliant yes active
	H7N1005LS		MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff (µs) typ: 0.042; Package: LDPAK (S)- (1)	compliant yes active

H7N-R производитель

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