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RF2495
Rev A4 030220
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +3.6
VDC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25°C, VCC=3.0V
RF/LO Frequency Range
850 to 940
MHz
Specifications
800 to 1000
MHz
Usable range
LNA
Gain
15.5
17.0
dB
High gain state
1.0
4.0
dB
Low gain state
Input IP3
-2.5
+1.0
dBm
High gain state, RF IN=-25dBm
+11.0
+12.5
dBm
Low gain state, RF IN=-15dBm
Noise Figure
1.9
2.2
dB
High gain state
13.5
dB
Low gain state
Input VSWR
1.67:1
Output VSWR
1.67:1
Mixer
Conversion Gain
-6.5
-5.5
dB
With LO=+2dBm
-6.0
-5.5
dB
With LO=+4dBm
Input IP3
+7.5
+11.0
dBm
With LO=+2dBm
+10.0
+13.0
dBm
With LO=+4dBm
LO Input Level
-2
4.0
dBm
Attenuation
ATTN Enable
VCC-0.3
>1.6
V
Low gain state
ATTN Disable
0
0.3
V
High gain state
Power Down
Chip Enable
VCC-0.3
>1.6
V
Voltage applied to PD pin
Chip Disable
0
V
Voltage applied to PD pin
Power Supply
Voltage
3.0
V
Specifications
2.7 to 3.3
V
Operating limits
Current Consumption
10
12
mA
Chip enabled
<1
3.0
uA
Chip disabled
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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