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DMC3025LSDQ датащи(PDF) 4 Page - Diodes Incorporated |
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DMC3025LSDQ датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 11 page ![]() DMC3025LSDQ Document number: DS40186 Rev. 1 - 2 4 of 11 www.diodes.com October 2017 © Diodes Incorporated DMC3025LSDQ Electrical Characteristics P-CHANNEL – Q1 (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) -1.0 — -2.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 38 45 m Ω VGS = -10V, ID = -5.2A — 65 85 VGS = -4.5V, ID = -4A Forward Transfer Admittance |YFS| — 5 — S VDS = -5V, ID = -5.2A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance CISS — 590 — pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 69 — pF Reverse Transfer Capacitance CRSS — 53 — pF Gate resistance RG — 11 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) QG — 5.1 — nC VDS = -15V, ID = -6A Total Gate Charge (VGS = 10V) QG — 10.5 — nC Gate-Source Charge QGS — 1.8 — nC Gate-Drain Charge QGD — 1.9 — nC Turn-On Delay Time tD(ON) — 6.8 — ns VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tR — 4.9 — ns Turn-Off Delay Time tD(OFF) — 28.4 — ns Turn-Off Fall Time tF — 12.4 — ns Reverse Recovery Time tRR — 14 — ns IF = 12A, di/dt = 500A/μs Reverse Recovery Charge QRR — 11 — nC Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
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