Drain-Source Leakage Current

Gate-Source Threshold Voltage

Drain-Source On Resistance

Drain-Source On Resistance

Forward Transconductance

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge

Drain-Source Breakdown Voltage

Gate-Source Leakage Current

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Body Diode

1

2

3

4

1000 mJ

+150°C MAX

-55°C to +150°C

-55°C to +125°C

300°C MAX

Single Pulse Avalanche Energy

Junction Temperature

Storage Temperature

Case Operating Temperature Range

Lead Temperature Range

(10 Seconds)

Drain to Source Voltage

Drain to Gate Voltage

Gate to Source Voltage

(Continuous)

Continuous Current

Pulsed Current

Thermal Resistance

(Junction to Case)@25°C

Thermal Resistance

(Junction to Case)@125°C

ABSOLUTE MAXIMUM RATINGS

200V MAX

200V MAX

±20V MAX

30A MAX

46A MAX

1.0°C/W

1.6°C/W

f=1MHz

Parameter

Units

MSK3017

Test Conditions

V

µA

nA

V

Ω

Ω

S

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

V

nS

µC

Min.

200

-

-

2.0

-

-

24

-

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

-

-

-

-

-

-

23

120

100

94

5200

1200

310

1.8

390

4.8

Max.

-

250

±100

4.0

0.09

0.06

-

230

42

110

-

-

-

-

-

-

-

-

590

7.2

ELECTRICAL SPECIFICATIONS

2

NOTES:

This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.

Resistance as seen at package pins.

Resistance for die only; use for thermal calculations.

4

2

Rev. - 8/01

1

1

1

1

1

1

3

1

1

1

1

1

1

1

1