IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

1.5

2.6

S

C

iss

1100 1350

pF

C

oss

V

GS

= 0 V, V

110 135

pF

C

rss

40

60

pF

t

d(on)

17

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

32

ns

t

f

18

ns

Q

g(on)

42

nC

Q

gs

V

GS

= 10 V, V

8nC

Q

gd

21

nC

R

thJC

0.62

K/W

R

thCK

(TO-220)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

3

A

I

SM

Repetitive; pulse width limited by T

JM

12

A

V

SD

I

1.5

V

t

rr

I

700

ns

TO-263 (IXTA) Outline

1. Gate

2. Drain

3. Source

4. Drain

BottomSide

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 (IXTP) Outline

Notes: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

IXTA 3N120

IXTP 3N120