IXTK140N20P datasheet(1/5 Pages) IXYS

номер детали	IXTK140N20P

подробное описание детали	PolarHT Power MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS = 0 V, ID = 250 µA

200

V

GS(th)

V

DS = VGS, ID = 500µA

2.5

5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 150°C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

18

m

Ω

V

GS = 15 V, ID = 140A

14

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 175°C

200

V

DGR

T

J = 25°C to 175°C; RGS = 1 MΩ

200

V

GSM

±20

V

I

D25

T

C = 25°C

140

A

I

D(RMS)

External lead current limit

75

A

I

DM

T

C = 25°C, pulse width limited by TJM

280

A

I

AR

T

C = 25°C60

A

E

AR

T

C = 25°C

100

mJ

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

10

V/ns

T

J ≤ 150°C, RG = 4 Ω

P

D

T

C = 25°C

800

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

10

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99194(07/04)

PolarHTTM

Power MOSFET

IXTK 140N20P

Advanced Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

PolarHTTM DMOS transistors

utilize proprietary designs and

process. US patent is pending.

V

DSS

= 200

V

I

D25

= 140

A

R

DS(on) =

18 m

Ω

TO-264(SP) (IXTK)

(TAB)

G

D

S

Аналогичный номер детали - IXTK140N20P

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Inchange Semiconductor ...	IXTK140N20P	295Kb / 2P	isc N-Channel MOSFET Transistor

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IXTK140N20P датащи(PDF) 1 Page - IXYS Corporation

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