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IXTH13N110 датащи(PDF) 1 Page - IXYS Corporation

номер детали IXTH13N110
подробное описание детали  MEGA MOS FET
PDF  2 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTH13N110 датащи(HTML) 1 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1100
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
1100
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C13
A
I
DM
T
C = 25°C, pulse width limited by TJM
52
A
P
D
T
C = 25°C
360
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
6g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode
IXTH 13N110 V
DSS
= 1100 V
MegaMOSTMFET
I
D25
= 13 A
R
DS(on)
= 0.92
Ω
Ω
Ω
Ω
Ω
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 3 mA
1100
V
V
GS(th)
V
DS
= V
GS, ID = 250 µA
2
4.5
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J = 25°C
500
µA
V
GS
= 0 V
T
J = 125°C3
mA
R
DS(on)
V
GS
= 10 V, I
D = 0.5 • ID25
0.80
0.92
Ω
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
Features
l
International standard package
JEDEC TO-247 AD
l
Low R
DS (on) HDMOS
TM process
l
Rugged polysilicon gate cell structure
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Space savings
l
High power density
92781F (3/98)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.


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