IXFH28N50F datasheet(1/2 Pages) IXYS

номер детали	IXFH28N50F

подробное описание детали	HiPerRF Power MOSFETs F-Class: MegaHertz Switching

PDF	2 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C28

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

112

A

I

AR

T

C

= 25

°C28

A

E

AR

T

C

= 25

°C35

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

10

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

315

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-247

1.13/10 Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 4mA

2.0

4.0

V

I

GSS

V

GS

=

±20 V, V

DS = 0

±100 nA

I

DSS

V

DS

= V

DSS

50

µA

V

GS = 0 V

T

J

= 125

°C

1.5 mA

R

DS(on)

V

GS = 10 V, ID = 0.5

I

D25

190 m

Ω

Note 1

98883 (1/02)

Advance Technical Information

HiPerRFTM

Power MOSFETs

F-Class: MegaHertz Switching

N-Channel Enhancement Mode

Avalanche Rated,

Low Q

g, Low Intrinsic Rg

High dV/dt,

Low t

rr

Features

l RF capable MOSFETs

l Double metal process for low gate

resistance

l UnclampedInductiveSwitching(UIS)

rated

l Low package inductance

- easy to drive and to protect

l Fast intrinsic rectifier

Applications

l DC-DC converters

l Switched-mode and resonant-mode

power supplies, >500kHz switching

l DC choppers

l 13.5 MHz industrial applications

l Pulse generation

l Laser drivers

l RF amplifiers

Advantages

l Space savings

l High power density

TO-247 AD (IXFH)

(TAB)

G = Gate,D = Drain,

S = Source,TAB = Drain

TO-268 (IXFT) Case Style

(TAB)

G

S

IXFH 28N50F

IXFT 28N50F

V

DSS

= 500V

I

D25

=

28A

R

DS(on)

= 190m

Ω

t

rr ≤

≤≤≤≤ 250 ns

Аналогичный номер детали - IXFH28N50F

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFH28N50F	112Kb / 2P	HiPerRF Power MOSFETs
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Аналогичный номер детали - IXFH28N50F

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