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© 2004 IXYS All rights reserved

IXBD4410

IXBD4411

IXYS reserves the right to change limits, test conditions and dimensions.

Type

Description

Package

Temperature Range

IXBD4410PI

Full-Feature Low-Side Driver 16-Pin P-DIP

-40 to +85

°C

IXBD4411PI

Full-Feature High-Side Driver 16-Pin P-DIP

-40 to +85

°C

IXBD4410SI

Full-Feature Low-Side Driver 16-Pin SO

-40 to +85

°C

IXBD4411SI

Full-Feature High-Side Driver 16-Pin SO

-40 to +85

°C

The IXBD4410/IXBD4411 ISOSMART

chipset is designed to control the gates

of two Power MOSFETs or Power

IGBTs that are connected in a half-

bridge (phase-leg) configuration for

driving multiple-phase motors, or used

in applications that require half-bridge

power circuits. The IXBD4410/

IXBD4411 is a full-feature chipset

consisting of two 16-Pin DIP or SO

devices interfaced and isolated by two

small-signal ferrite pulse transformers.

The small-signal transformers provide

greater than 1200 V isolation.

Even with commutating noise ambients

greater than

±50 V/ns and up to 1200 V

potentials, this chipset establishes

error-free two-way communications

between the system ground-reference

IXBD4410 and the inverter output-

reference IXBD4411. They incorporate

undervoltage V

overcurrent or desaturation shutdown

to protect the IGBT or Power MOSFET

devices from damage.

The chipset provides the necessary

gate drive signals to fully control the

grounded-source low-side power

device as well as the floating-source

high-side power device. Additionally,

the IXBD4410/4411 chipset provides a

negative-going, off-state gate drive

signal for improved turn-off of IGBTs or

Power MOSFETs and a system logic-

compatible status fault output FLT to

indicate overcurrent or desaturation,

and undervoltage V

status fault, both chipset keep their

respective gate drive outputs off; at

V

540 V-

Features

1200 V or greater low-to-high side

isolation.

Drives Power Systems Operating on

up to 575 V AC mains

dv/dt immunity of greater than

±50V/ns

Proprietary low-to-high side level

translation and communication

On-chip negative gate-drive supply

to ensure Power MOSFET or IGBT

turn-off and to prevent gate noise

interference

5 V logic compatible HCMOS inputs

with hysteresis

Available in either the 16-Pin DIP or

the 16-Pin wide-body, small-outline

plastic package

20 ns switching time with 1000 pF

load; 100 ns switching time with

10,000 pF load

100 ns propagation delay time

2 A peak output drive capability

Self shut-down of output in response

to over-current or short-circuit

Under-voltage and over-voltage V

DD

lockout protection

Protection from cross conduction of

the half bridge

Logic compatible fault indication

from both low and high-side driver

Applications

1- or 3-Phase Motor Controls

Switch Mode Power Supplies

(SMPS)

Uninterruptible Power Supplies

(UPS)

Induction Heating and Welding

Systems

Switching Amplifiers

General Power Conversion Circuits