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IRF7328 датащи(PDF) 2 Page - International Rectifier

номер детали IRF7328
подробное описание детали  HEXFET Power MOSFET
PDF  8 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7328 датащи(HTML) 2 Page - International Rectifier

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IRF7328
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
37
56
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse Recovery Charge
–––
36
54
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
-32
-2.0
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.018 –––
V/°C
Reference to 25°C, ID = -1mA
–––
17
21
VGS = -10V, ID = -8.0A
‚
–––
26.8
32
VGS = -4.5V, ID = -6.8A
‚
VGS(th)
Gate Threshold Voltage
-1.0
–––
-2.5
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
12
–––
–––
S
VDS = -10V, ID = -8.0A
–––
–––
-15
VDS = -24V, VGS = 0V
–––
–––
-25
VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
52
78
ID = -8.0A
Qgs
Gate-to-Source Charge
–––
9.8
–––
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.3
–––
VGS = -10V
td(on)
Turn-On Delay Time
–––
13
20
VDD = -15V, VGS = -10.0V
tr
Rise Time
–––
15
23
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
198
297
RG = 6.0Ω
tf
Fall Time
–––
98
147
RD = 15Ω
‚
Ciss
Input Capacitance
––– 2675 –––
VGS = 0V
Coss
Output Capacitance
–––
409
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
262
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G



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