Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

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PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Diode junction capacitance

Storage temperature

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

C

J

T

STG

A

A

mA

pF

3.0

80

1.0

+1

50

-

55

O

V

= V

T = 25 C

R

RRM

J

300

SL32-AL

SL34-AL

20

40

14

28

20

40

-55 to +100

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =3.0A

F

V

F

(V)

*4

0.40

0.38

O

( C)

Operating

temperature

T ,

J

Mechanical data

•

MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

SMA-L

Package outline

0.209(5.3)

0.185(4.7)

0.012(0.3) Typ.

0.114(2.9)

0.091(2.3)

0.080(2.0)

0.063(1.6)

0.032 (0.8) Typ.

0.032(0.8) Typ.

Dimensions in inches and (millimeters)

SMA-L

A

3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V

SMA-L PACKAGE

SL32-AL

SL34-AL

1

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&

Moisture Sensitivity Level 1