FEP6xT, FEPF6xT, FEPB6xT

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Vishay General Semiconductor

Revision: 23-Feb-16

3

Document Number: 88598

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

0

6

8

10

75

50

25

0

100

125

150

4

2

Case Temperature (°C)

Resistive or Inductive Load

0

50

1

100

10

40

30

20

80

70

60

10

Number of Cycles at 60 Hz

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Instantaneous Forward Voltage (V)

0.1

10

100

1

1.8

T

T

Pulse Width = 300 μs

1 % Duty Cycle

60

40

20

0

100

80

0.01

0.1

10

1

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Reverse Voltage (V)

0.1

10

1

100

30

20

10

40

50

60

0

T

f = 1.0 MHz

V