PI3B3383

3.3V, 5-Bit, 4-Port Bus Exchange

2

PS8580

10/18/01

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Storage Temperature ........................................................ –65°C to +150°C

Ambient Temperature with Power Applied ........................... –40°C to +85°C

Supply Voltage to Ground Potential ...................................... –0.5Vto+4.6V

DC Input Voltage ................................................................... –0.5Vto+4.6V

DC Output Current ............................................................................ 120mA

Power Dissipation ................................................................................. 0.5W

Note:

Stresses greater than those listed under MAXIMUM

RATINGS may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at these or any other conditions above those

indicated in the operational sections of this specifica-

tion is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

Notes:

1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.

3. Measured by the voltage drop between AB and CD pin at indicated current through the switch. ON resistance is determined by

the lower of the voltages on the two (A or B, C or D) pins.

4. This parameter is determined by device characterization but is not production tested.

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)

s

r

e

t

e

m

a

r

a

Pn

o

i

t

p

i

r

c

s

e

Ds

n

o

i

t

i

d

n

o

C

t

s

e

T

)

1

(

.

n

i

Mp

y

T

)

2

(

.

x

a

Ms

t

i

n

U

I

e

g

a

t

l

o

V

H

G

I

H

t

u

p

n

Il

e

v

e

L

H

G

I

H

c

i

g

o

L

d

e

e

t

n

a

r

a

u

G0

.

2

——

V

I

e

g

a

t

l

o

V

W

O

L

t

u

p

n

Il

e

v

e

L

W

O

L

c

i

g

o

L

d

e

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t

n

a

r

a

u

G5

.

0

–—

8

.

0

I

t

n

e

r

r

u

C

H

G

I

H

t

u

p

n

C

V

,

.

x

a

M

=

N

I

V

=

C

C

——

1

±

µA

I

t

n

e

r

r

u

C

W

O

L

t

u

p

n

C

V

,

.

x

a

M

=

N

I

D

N

G

=

——

1

±

I

H

Z

O

t

n

e

r

r

u

C

t

u

p

t

u

O

e

c

n

a

d

e

p

m

I

h

g

i

HV

<

D

C

,

B

A

<

0

C

C

——

1

±

I

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g

a

t

l

o

V

e

d

o

i

D

p

m

a

l

C

M

=

N

I

I

,

.

N

I

A

m

8

1

–

=

—

7

.

0

–

2

.

1

–

V

O

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c

n

a

t

s

i

s

e

R

n

O

h

c

t

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w

S

)

3

(

C

M

=

N

I

V

,

.

N

I

I

,

V

0

.

0

=

N

O

A

m

8

4

=

C

M

=

N

I

V

,

.

N

I

I

,

V

4

.

2

=

N

O

A

m

5

1

=

—

—

5

0

1

7

5

1

Ω

s

r

e

t

e

m

a

r

a

P

)

4

(

n

o

i

t

p

i

r

c

s

e

Ds

n

o

i

t

i

d

n

o

C

t

s

e

T.

p

y

Ts

t

i

n

U

I

e

c

n

a

t

i

c

a

p

a

C

t

u

p

n

I

I

V

0

=

0

.

3

F

p

C

F

F

O

f

f

O

h

c

t

i

w

S

,

e

c

n

a

t

i

c

a

p

a

C

D

C

/

B

A

0

.

2

1

O

n

O

h

c

t

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w

S

,

e

c

n

a

t

i

c

a

p

a

C

D

C

/

B

A

0

.

4

2