NTE2309 datasheet(1/2 Pages) NTE

номер детали	NTE2309

подробное описание детали	Silicon NPN Transistor High Voltage, High Current Switch

PDF	2 Pages

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производитель	NTE [NTE Electronics]

домашняя страница	http://www.nteinc.com

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NTE2309

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage

D Fast Switching Speed

D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO

900V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Emitter Voltage, VCEO

800V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, VEBO

7V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, IC

Continuous

12A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1)

25A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, IB

4A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation (TA = +25°C), PC

2.5W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation (TC = +25°C), PC

100W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, TJ

+150

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

–55

° to +150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pules test: Pulse Width

≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector Cutoff Current

ICBO

VCB = 400V, IE = 0

–

10

µA

Emitter Cutoff Current

IEBO

VEB = 5V, IC = 0

–

10

µA

DC Current Gain

hFE

VCE = 5V, IC = 0.4A

10

–

VCE = 5V, IC = 2A

8

–

Current Gain–Bandwidth Product

fT

VCE = 10V, IC = 0.4A

–

15

–

MHz

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 3A, IB = 0.6A

–

2.0

V

Base–Emitter Saturation Voltage

VBE(sat)

IC = 3A, IB = 0.6A

–

1.5

V

Output Capacitance

Cob

VCB = 10V, f = 1MHz

–

120

–

pF

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