TCLD10.. Series

Vishay Semiconductors

www.vishay.com

2 (10)

Rev. A3, 19–Mar–01

Document Number 83516

Features

Approvals:

D BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002),

Certificate number 7081 and 7402

D Underwriters Laboratory (UL) 1577 recognized,

file number E-76222 – Double Protection

D CSA (C-UL) 1577 recognized

file number E- 76222 - Double Protection

D VDE 0884, Certificate number 132473

VDE 0884 related features:

D Rated impulse voltage (transient overvoltage)

D Isolation test voltage

D Rated isolation voltage (RMS includes DC)

D Rated recurring peak voltage (repetitive)

D Creepage current resistance according

to VDE 0303/IEC 112

Comparative Tracking Index: CTI

≥ 175

D Thickness through insulation ≥ 0.75 mm

D Creepage distance > 8 mm

D Tested acc. 60950: Am4: 1997 clause 2.9.6.

General features:

D Low profile package

D Darlington output

D Isolation materials according to UL94-VO

D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)

D Climatic classification 55/100/21 (IEC 68 part 1)

D Special construction:

Therefore, extra low coupling capacity of

typical 0.2 pF, high Common Mode Rejection

D Low temperature coefficient of CTR

D Coupling System W

Absolute Maximum Ratings

Input (Emitter)

Parameter

Test Conditions

Symbol

Value

Unit

Reverse voltage

6

V

Forward current

60

mA

Forward surge current

1.5

A

Power dissipation

100

mW

Junction temperature

125

°C

Output (Detector)

Parameter

Test Conditions

Symbol

Value

Unit

Collector emitter voltage

35

V

Emitter collector voltage

7

V

Collector current

80

mA

Collector peak current

100

mA

Power dissipation

150

mW

Junction temperature

125

°C

Coupler

Parameter

Test Conditions

Symbol

Value

Unit

Isolation test voltage (RMS)

5

kV

Total power dissipation

250

mW

Operating ambient temperature range

–40 to +100

°C

Storage temperature range

–40 to +100

°C

Soldering temperature

235

°C