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MSK3002 датащи(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK3002 датащи(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 6 page ![]() N-CHANNEL (Q2, Q3) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 Output Capacitance of Sensing Cells 1 Current Sensing Ratio 1 P-CHANNEL (Q1, Q4) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 BODY DIODE ID = 17A VDS = 48V VGS = 10V VGS = 0V VDS = 25V f = 1 MHz 1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4TA = 25°C unless otherwise specified. NOTES: VDSS Drain to Source Voltage 55V MAX VDGDR Drain to Gate Voltage (RGS = 1 MΩ) 55V MAX VGS Gate to Source Voltage (Continuous) ±20V MAX ID Continuous Current 10A MAX IDM Pulsed Current 25A MAX RTH-JC Thermal Resistance (Junction to Case) 7.9°C/W IM Sense Current - Continuou 13 mA MAX IMM Sense Current Peak 33 mA MAX 2 Rev. C 7/00 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Single Pulse Avalanche Energy (Q1,Q4) 6.0J (Q2,Q3) 71 mJ TJ JunctionTemperature +175°CMAX TST Storage Temperature -55°C to +150°C TC Case Operating Temperature Range -55°C to +125°C TLD Lead Temperature Range (10Seconds) 300°C MAX Parameter Test Conditions 4 Drain-Source Breakdown Voltage Drain-Mirror Breakdown Voltage Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source on Resistance 2 Drain-Source on Resistance 3 Forward Transconductance 1 Forward on Voltage 1 Reverse Recovery Time 1 Reverse Recovery Charge 1 IS = 17A VGS = 0V (Q2, Q3) IS = -7.2A VGS = 0V (Q1, Q4) IS = 17A di/dt = 100A/µS (Q2, Q3) IS = -7.2A di/dt = 100A/µS (Q1, Q4) IS = 17A di/dt = 100A/µS (Q2, Q3) IS = -7.2A di/dt = 100A/µS (Q1, Q4) VGS = 0V VDS = -25V f = 1 MHz VDD = -28V ID = -7.2A RG = 24Ω RD = 3.7Ω ID = -7.2A VDS = -44V VGS = -10V ID = 17A VGS = 0 ID = 0.25 mA (All Transistors) VGS = 0 VDS = 55V, (Q2, Q3) VDS = 55V VGS = 0V, (Q2, Q3) VDS = -55V VGS = 0V, (Q1, Q4) VGS = ±20V VDS = 0V (All Transistors) VDS = VGS ID = 250 µA (Q2, Q3) VDS = VGS ID = 250 µA (Q1, Q4) VGS = 10V ID = 10A (Q2, Q3) VGS = -10V ID = -7.2A (Q1, Q4) VGS = 10V ID = 10A (Q2, Q3) VGS = -10V ID = -7.2A (Q1, Q4) VDS = 25V ID = 10A (Q2, Q3) VDS = -25V ID = -7.2A (Q1, Q4) 55 55 - - - 2.0 -2.0 - - - - 5.8 2.5 - - - - - - - - - - - 740 - - - - - - - - - - - - - - - - 12 59 25 38 720 360 75 14 - - - 25 -25 ±100 4.5 -4.5 0.20 0.28 0.10 0.175 - - 24 6.3 9 - - - - - - - - 820 - - - - - - - - - - - - - - - - 1.5 -1.6 87 47 0.29 0.084 - - 180 71 0.60 0.13 V V nS nS µC µC - - - 13 55 23 37 350 170 92 19 5.1 10 - - - - - - - nC nC nC nS nS nS nS pF pF pF V V µA µA nA V V Ω Ω Ω Ω S S nC nC nC nS nS nS nS pF pF pF pF r Units Typ. Max. Min. MSK 3002 VDD = 30V ID = 17A RG = 18Ω RD = 1.7Ω Drain-Source Leakage Current |
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