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MSK3002 датащи(PDF) 2 Page - M.S. Kennedy Corporation

номер детали MSK3002
подробное описание детали  H-BRIDGE MOSFET POWER MODULE
PDF  6 Pages
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производитель  MSK [M.S. Kennedy Corporation]
домашняя страница  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK3002 датащи(HTML) 2 Page - M.S. Kennedy Corporation

  MSK3002 Datasheet HTML 1Page - M.S. Kennedy Corporation MSK3002 Datasheet HTML 2Page - M.S. Kennedy Corporation MSK3002 Datasheet HTML 3Page - M.S. Kennedy Corporation MSK3002 Datasheet HTML 4Page - M.S. Kennedy Corporation MSK3002 Datasheet HTML 5Page - M.S. Kennedy Corporation MSK3002 Datasheet HTML 6Page - M.S. Kennedy Corporation  
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N-CHANNEL (Q2, Q3)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
P-CHANNEL (Q1, Q4)
Total Gate Charge
1
Gate-Source Charge 1
Gate-Drain Charge
1
Turn-On Delay Time 1
Rise Time
1
Turn-Off Delay Time 1
Fall Time
1
Input Capacitance
1
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
ID = 17A
VDS = 48V
VGS = 10V
VGS = 0V
VDS = 25V
f = 1 MHz
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but
are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4TA = 25°C unless otherwise specified.
NOTES:
VDSS
Drain to Source Voltage
55V MAX
VDGDR Drain to Gate Voltage
(RGS = 1 MΩ)
55V MAX
VGS
Gate to Source Voltage
(Continuous)
±20V MAX
ID
Continuous Current
10A MAX
IDM
Pulsed Current
25A MAX
RTH-JC Thermal Resistance
(Junction to Case)
7.9°C/W
IM
Sense Current - Continuou
13 mA MAX
IMM
Sense Current Peak
33 mA MAX
2
Rev. C 7/00
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Single Pulse Avalanche Energy
(Q1,Q4)
6.0J
(Q2,Q3)
71 mJ
TJ
JunctionTemperature
+175°CMAX
TST Storage Temperature
-55°C to +150°C
TC
Case Operating Temperature Range
-55°C to +125°C
TLD Lead Temperature Range
(10Seconds)
300°C MAX
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance
2
Drain-Source on Resistance
3
Forward Transconductance
1
Forward on Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
IS = 17A VGS = 0V (Q2, Q3)
IS = -7.2A VGS = 0V (Q1, Q4)
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
VGS = 0V
VDS = -25V
f = 1 MHz
VDD = -28V
ID = -7.2A
RG = 24Ω
RD = 3.7Ω
ID = -7.2A
VDS = -44V
VGS = -10V
ID = 17A
VGS = 0
ID = 0.25 mA (All Transistors)
VGS = 0
VDS = 55V, (Q2, Q3)
VDS = 55V VGS = 0V, (Q2, Q3)
VDS = -55V
VGS = 0V, (Q1, Q4)
VGS = ±20V
VDS = 0V (All Transistors)
VDS = VGS
ID = 250 µA (Q2, Q3)
VDS = VGS
ID = 250 µA (Q1, Q4)
VGS = 10V
ID = 10A (Q2, Q3)
VGS = -10V
ID = -7.2A (Q1, Q4)
VGS = 10V
ID = 10A (Q2, Q3)
VGS = -10V
ID = -7.2A (Q1, Q4)
VDS = 25V
ID = 10A (Q2, Q3)
VDS = -25V
ID = -7.2A (Q1, Q4)
55
55
-
-
-
2.0
-2.0
-
-
-
-
5.8
2.5
-
-
-
-
-
-
-
-
-
-
-
740
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12
59
25
38
720
360
75
14
-
-
-
25
-25
±100
4.5
-4.5
0.20
0.28
0.10
0.175
-
-
24
6.3
9
-
-
-
-
-
-
-
-
820
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-1.6
87
47
0.29
0.084
-
-
180
71
0.60
0.13
V
V
nS
nS
µC
µC
-
-
-
13
55
23
37
350
170
92
19
5.1
10
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
µA
µA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
Units
Typ.
Max.
Min.
MSK 3002
VDD = 30V
ID = 17A
RG = 18Ω
RD = 1.7Ω
Drain-Source Leakage Current



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