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BCR2PM датащи(PDF) 3 Page - Mitsubishi Electric Semiconductor

номер детали BCR2PM
подробное описание детали  LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
PDF  4 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR2PM датащи(HTML) 3 Page - Mitsubishi Electric Semiconductor

  BCR2PM Datasheet HTML 1Page - Mitsubishi Electric Semiconductor BCR2PM Datasheet HTML 2Page - Mitsubishi Electric Semiconductor BCR2PM Datasheet HTML 3Page - Mitsubishi Electric Semiconductor BCR2PM Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Feb.1999
NATURAL CONVECTION
NO FINS
PRINT BOARD
t = 1.6mm
SOLDER LAND :
φ2mm
100
23
100
57 101 23 5 7 102 23 5 7 103
3
2
101
7
5
3
2
7
5
7
5
3
2
10–1
PGM = 1W
PG(AV)
= 0.1W
IGM = 1A
IRGT I, IRGT III
VGM = 6V
VGD = 0.1V
VGT
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IRGT I , IRGT III
VRGT I
VRGT III
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
103
10–1
103
104
102
7
5
3
2
100
7
5
3
2
101
7
5
3
2
7
5
3
2
10123 5 7
23 5 7
102
105
23 5 7
23 5 7
NATURAL CONVECTION
NO FINS
PRINT BOARD
t = 1.6mm
SOLDER LAND :
φ2mm
1.8
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
0
160
120
60
40
20
140
100
80
0
3.2
0
0.4 0.8
1.6
1.2
2.0 2.4 2.8
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE



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