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CMS11 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали CMS11
подробное описание детали  TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CMS11 датащи(HTML) 2 Page - Toshiba Semiconductor

  CMS11 Datasheet HTML 1Page - Toshiba Semiconductor CMS11 Datasheet HTML 2Page - Toshiba Semiconductor CMS11 Datasheet HTML 3Page - Toshiba Semiconductor CMS11 Datasheet HTML 4Page - Toshiba Semiconductor CMS11 Datasheet HTML 5Page - Toshiba Semiconductor  
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CMS11
2003-02-17
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
IFM = 0.5 A
¾
0.38
¾
VFM (2)
IFM = 1.0 A
¾
0.42
¾
Peak forward voltage
VFM (3)
IFM = 2.0 A
¾
0.49
0.55
V
VRRM = 5.0 V
¾
2.0
¾
Repetitive peak reverse current
IRRM
VRRM = 40 V
¾
20.0
500
mA
Junction capacitance
Cj
VR = 10 V, f = 1.0 MHz
¾
95
¾
pF
Device mounted on a ceramic board
(soldering land: 2 mm
´ 2 mm)
¾
¾
60
Rth (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
´ 6 mm)
¾
¾
135
Thermal resistance
Rth (j-ℓ)
¾
¾
¾
16
°C/W
Marking
Following Indicates the Data
of Manufacture
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier
products. This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Cathode mark
Type code
Lot No.
SA
Month of
manufac-
ture
January to December
are denoted by letter A
to L respectively.
Year of
manufac-
ture
Last decimal digit of
the year of
manufacture
0
1
2
3
4
5
6
7
8
9
3.0
1.4
Unit: mm
1.4



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