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CMS11 датащи(PDF) 2 Page - Toshiba Semiconductor |
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CMS11 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() CMS11 2003-02-17 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.5 A ¾ 0.38 ¾ VFM (2) IFM = 1.0 A ¾ 0.42 ¾ Peak forward voltage VFM (3) IFM = 2.0 A ¾ 0.49 0.55 V VRRM = 5.0 V ¾ 2.0 ¾ Repetitive peak reverse current IRRM VRRM = 40 V ¾ 20.0 500 mA Junction capacitance Cj VR = 10 V, f = 1.0 MHz ¾ 95 ¾ pF Device mounted on a ceramic board (soldering land: 2 mm ´ 2 mm) ¾ ¾ 60 Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm ´ 6 mm) ¾ ¾ 135 Thermal resistance Rth (j-ℓ) ¾ ¾ ¾ 16 °C/W Marking Following Indicates the Data of Manufacture Standard Soldering Pad Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. Cathode mark Type code Lot No. SA Month of manufac- ture January to December are denoted by letter A to L respectively. Year of manufac- ture Last decimal digit of the year of manufacture 0 1 2 3 4 5 6 7 8 9 3.0 1.4 Unit: mm 1.4 |
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