APM9930C datasheet(2/13 Pages) ANPEC

номер детали	APM9930C

подробное описание детали	Dual Enhancement Mode MOSFET (N-and P-Channel)

PDF	13 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 13 page

 ANPEC Electronics Corp.

Rev. A.1 - Sep., 2002

www.anpec.com.tw

APM9930/C

Symbol

Parameter

Test Condition

Min.

Typ. Max.

Unit

Static

N-Ch

DSS

Drain-Source Breakdown

Voltage

GS=0V , IDS=250µA

P-Ch

-20

DS=18V , VGS=0V

N-Ch

DSS

Zero Gate Voltage Drain

Current

DS=-18V , VGS=0V

P-Ch

-1

µA

DS=VGS , IDS=250µA

N-Ch

0.6

1.3

GS(th)

Gate Threshold Voltage

DS=VGS , IDS=-250µA

P-Ch

-0.6

-1.3

GS=±12V , VDS=0V

N-Ch

±100

GSS

Gate Leakage Current

GS=±10V , VDS=0V

P-Ch

±100

GS=10V , IDS=15A

GS=4.5V , IDS=5A

GS=2.5V , IDS=2A

N-Ch

GS=-10V , IDS=-5A

GS=-4.5V , IDS=-3.2A

DS(ON)

Drain-Source On-state

Resistance

GS=-2.5V , IDS=-1A

P-Ch

105

Ω

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Unit

DSS

Drain-Source Voltage

-20

GSS

Gate-Source Voltage

±12

Maximum Drain Current – Continuous

-5

Maximum Drain Current – Pulsed

-10

A=25°C

2.5

Maximum Power Dissipation

A=100°C

1.0

Maximum Junction Temperature

150

°C

STG

Storage Temperature Range

-55 to 150

°C

RθjA

Thermal Resistance – Junction to Ambient

°C/W

* Surface Mounted on FR4 Board, t

≤ 10 sec.

Notes

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

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