TSDF04040X/TSDF04040XR

Vishay Semiconductors

www.vishay.com

2 (4)

Rev. 1, 12–Nov–01

Document Number 85090

All of following data and characteristics are valid for operating either

amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)

Absolute Maximum Ratings

Parameter

Test Conditions

Symbol

Value

Unit

Drain - source voltage

8

V

Drain current

30

mA

Gate 1/Gate 2 - source peak current

10

mA

Gate 1/Gate 2 - source voltage

6

V

Gate 1/Gate 2 - source voltage

1.5

V

Total power dissipation

200

mW

Channel temperature

150

°C

Storage temperature range

–55 to +150

°C

Maximum Thermal Resistance

Parameter

Test Conditions

Symbol

Value

Unit

Channel ambient

plated with 35

µm Cu

450

K/W

Electrical DC Characteristics

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Drain - source

breakdown voltage

12

V

Gate 1 - source

breakdown voltage

7

10

V

Gate 2 - source

breakdown voltage

7

10

V

Gate 1 - source

leakage current

20

nA

Gate 2 - source

leakage current

20

nA

Drain - source

operating current

10

15

20

mA

Gate 1 - source

cut-off voltage

0.5

1.3

V

Gate 2 - source

cut-off voltage

0.8

1.0

1.4

V