Philips Semiconductors

PMV60EN

µTrenchMOS™ enhanced logic level FET

Product data

Rev. 01 — 15 January 2003

8 of 12

9397 750 10895

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03ak73

0

1

2

3

0

0.3

0.6

0.9

1.2

VSD (V)

IS

(A)

Tj = 25 °C

150

°C

VGS = 0 V

03ak75

0

2

4

6

8

10

02

46

8

10

QG (nC)

VGS

(V)

ID = 3 A

Tj = 25 °C

VDD = 15 V