MIP516 datasheet(2/3 Pages) PANASONIC

номер детали	MIP516

подробное описание детали	Silicon MOSFET type integrated circuit

PDF	3 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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2 / 3 page

MIP516

SLB00059AED

■ Electrical Characteristics T

C = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Drain-source ON resistance

RDS(on)

VIN = 5 V, IDS = 1 A

0.70

0.90

Ω

Drain-source voltage

VDS(on)

VIN

= 5 V, I

= 1 A

0.70

0.90

Drain clamp voltage

VDS(CLP)

VIN = 0 V, IDS = 3 mA

Drain-source cutoff current 1

IDS(off)1

VIN = 0 V, VDS = 12 V

0.01

5.00

µA

Drain-source cutoff current 2

IDS(off)2

VIN

= 0 V, V

= 25 V

0.02

8.00

Drain-source cutoff current 3

IDS(off)3

VIN = 0 V, VDS = 40 V

0.08

10.00

Input voltage high-level

VIN(H)

IDS = 0.5 A

Input voltage low-level

VIN(L)

IDS

= 1 mA

0.80

Input current (normal)

IIN(on)

VIN = 5 V, VDS = 0 V

0.3

0.5

Input current (act on protection) *

IIN(PROT)

VIN = 5 V

0.75

1.10

Over current protection limit

IOCP

VIN

= 5 V

1.1

1.7

Short circuit load protection limit

VDS(SHT)

VIN = 5 V

1.0

1.6

Input voltage of act on protection

VIN(PROT)

4.0

6.0

Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate.

2. When drain voltage exceeds the "drain clamp voltage" output MOS turn on, so drain voltage are clamped before the

drain-source junction become breakdown

3. *: State of short circuit laod protection and over heat protection (designed guarantee).

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