VITESSE

SEMICONDUCTOR CORPORATION

Preliminary Data Sheet

VSC838

3.2Gb/s

36x37 Crosspoint Switch

Page 8

G52351-0, Rev 3.0

02/12/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

DC Characteristics

All characteristics are over the specified operating conditions.

Table 3: Power Supply Requirements

Table 4: Control Port Input Levels (LVTTL/CMOS)

Table 5: Signal Input Levels (high-speed signal path)

Table 6: Signal Output Levels (high-speed signal path)

NOTES: (1) Mean peak-to-peak amplitude measurement of either true or complement of the differential signal.

(3) Terminated in 50

Ω to V

Parameter

Description

Min

Typ

Max

Units

Conditions

2,286

3,428

mA

back-terminations ON, high drive)

69

W

Supply, +85°C case

temperature and high

drive

Parameter

Description

Min

Typ

Max

Units

Conditions

Input HIGH voltage

1.7

V

Input LOW voltage

0

0.8

V

Input HIGH current

TBD

mA

Input LOW current

TBD

mA

Output HIGH voltage

V

DC Load < 500µA

Output LOW voltage

0

0.2

V

DC Load < 2mA

2.4

V

250

Ω to 3.3V(5%)

0.4

V

250

Ω to 3.3V(5%)

Parameter

Description

Min

Typ

Max

Units

Conditions

Input voltage amplitude

150

1100

mV

See Note 1

Input common-mode voltage

V

See Note 2

Parameter

Description

Min

Typ

Max

Units

Conditions

Output differential voltage

400

600

mV

See Note 1, 3

Output common-mode voltage

V

See Note 2, 3