CSD25501F3 datasheet(3/13 Pages) TI1

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CSD25501F3

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SLPS692 – OCTOBER 2017

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5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = –250 μA

–20

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = –16 V

–50

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = –6 V

–50

VDS = 0 V, VGS = –16 V

–1

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = –250 μA

–0.45

–0.75

–1.05

RDS(on)

Drain-to-source on-resistance

VGS = –1.8 V, IDS = –0.1 A

120

260

Ω

VGS = –2.5 V, IDS = –0.4 A

125

VGS = –4.5 V, IDS = –0.4 A

gfs

Transconductance

VDS = –2 V, IDS = –0.4 A

3.4

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = –10 V,

ƒ = 100 kHz

295

385

Coss

Output capacitance

Crss

Reverse transfer capacitance

4.1

5.3

Series gate resistance

Ω

Series clamp resistance

10,000

Ω

Gate charge total (–4.5 V)

VDS = –10 V, IDS = –0.4 A

1.02

1.33

Qgd

Gate charge gate-to-drain

0.09

Qgs

Gate charge gate-to-source

0.45

Qg(th)

Gate charge at Vth

0.36

Qoss

Output charge

VDS = –10 V, VGS = 0 V

1.8

td(on)

Turnon delay time

VDS = –10 V, VGS = –4.5 V,

IDS = –0.4 A, RG = 0 Ω

474

Rise time

428

td(off)

Turnoff delay time

1154

Fall time

945

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = –0.4 A, VGS = 0 V

–0.73

–0.95

Qrr

Reverse recovery charge

VDS= –10 V, IF = –0.4 A, di/dt = 200 A/μs

3.0

trr

Reverse recovery time

7.4

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

°C/W

Junction-to-ambient thermal resistance(2)

255

°C/W

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