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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MM54HC4016 датащи(PDF) 2 Page - National Semiconductor (TI) |
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MM54HC4016 датащи(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page  Absolute Maximum Ratings (Notes12) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VCC) b 05 to a15V DC Control Input Voltage (VIN) b 15 to VCCa15V DC Switch IO Voltage (VIO) b 05 to VCCa05V Clamp Diode Current (IIK IOK) g 20 mA DC Output Current per pin (IOUT) g 25 mA DC VCC or GND Current per pin (ICC) g 50 mA Storage Temperature Range (TSTG) b 65 Cto a150 C Power Dissipation (PD) (Note 3) 600 mW SO Package only 500 mW Lead Temp (TL) (Soldering 10 seconds) 260 C Operating Conditions Min Max Units Supply Voltage (VCC) 2 12 V DC Input or Output Voltage 0 VCC V (VIN VOUT) Operating Temp Range (TA) MM74HC b 40 a 85 C MM54HC b 55 a 125 C Input Rise or Fall Times VCCe20V (tr tf) 1000 ns VCCe45V 500 ns VCCe60V 400 ns DC Electrical Characteristics (Note 4) TAe25 C 74HC 54HC Symbol Parameter Conditions VCC TAeb40 to 85 CTAeb55 to 125 C Units Typ Guaranteed Limits VIH Minimum High Level 20V 15 15 15 V Input Voltage 45V 315 315 315 V 90V 63 63 63 V 120V 84 84 84 V VIL Maximum Low Level 20V 05 05 05 V Input Voltage 45V 135 135 135 V 90V 27 27 27 V 120V 36 36 36 V RON Maximum ‘ON’ Resistance VCTLeVIH ISe20 mA 45V 100 170 200 220 X (See Note 5) VISeVCC to GND 90V 50 85 105 120 X (Figure 1) 120V 30 70 85 100 X 20V 100 180 215 240 X VCTLeVIH ISe20 mA 45V 40 80 100 120 X VISeVCC or GND 90V 35 60 75 80 X (Figure 1) 120V 20 40 60 70 X RON Maximum ‘ON’ Resistance VCTLeVIH 45V 10 15 20 20 X Matching VISeVCC to GND 90V 5 10 15 15 X 12V 5 10 15 15 X IIN Maximum Control VINeVCC or GND 60V g 01 g 10 g 10 m A Input Current IIZ Maximum Switch ‘OFF’ VOSeVCC or GND 60V g 60 g 600 g 600 nA Leakage Current VISeGND or VCC 90V g 80 g 800 g 800 nA VCTLeVIL (Figure 2) 120V g 100 g 1000 g 1000 nA IIZ Maximum Switch ‘ON’ VISeVCC to GND 60V g 40 g 150 g 150 nA Leakage Current VCTLeVIH VOH e OPEN 90V g 50 g 200 g 200 nA (Figure 3) 120V g 60 g 300 g 300 nA ICC Maximum Quiescent VINeVCC or GND 60V 20 20 40 m A Supply Current IOUTe0 mA 90V 40 40 80 m A 120V 80 80 160 m A Note 1 Absolute Maximum Ratings are those values beyond which damage to the device may occur Note 2 Unless otherwise specified all voltages are referenced to ground Note 3 Power Dissipation temperature derating plastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C Note 4 For a power supply of 5V g10% the worst case on resistances (RON) occurs for HC at 45V Thus the 45V values should be used when designing with this supply Worst case VIH and VIL occur at VCCe55V and 45V respectively (The VIH value at 55V is 385V) The worst case leakage current occur for CMOS at the higher voltage and so these values should be used Note 5 At supply voltages (VCC–GND) approaching 2V the analog switch on resistance becomes extremely non-linear Therefore it is recommended that these devices be used to transmit digital only when using these supply voltages VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89 2 |
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