!

Silicon MOSFET Technology

Operation from 24V to 50V

High Power Gain

Extreme Ruggedness

Internal Input and Output Matching

Excellent Thermal Stability

All Gold Bonding Scheme

Pb-free and RoHS Compliant

Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with

RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.

The high power HVV1012- 50 device is an enhancement mode RF MOSFET power

transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The

high voltage MOSFET technology produces over

50W of pulsed output power while

offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical

device structure assures high reliability and ruggedness as the device is specified to

withstand a 20:1 VSWR at all phase angles under full rated output power.

Device Part Number: HVV1012- 50

Evaluation Kit Part Number: HVV1012- 50-EK

ORDERING INFORMATION

DESCRIPTION

TYPICAL PERFORMANCE

FEATURES

REV. A

Specifications are subject to change without notice.

MODE

FREQUENCY

VDD

IDQ

Power

GAIN

EFFICIENCY

IRL

(MHz)

(V)

(mA)

(W)

(dB)

(%)

(dB)

Class AB

1150

50

100

250

19.5

48

20:1

2

2

2

2

GE

PACKAGE