GLT41016 datasheet(21/23 Pages) ETC

21 / 23 page

G -LINK

GLT41016

64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Dec 1998 (Rev 2.1)

G-Link Technology Corporation

2701Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

2F, No.12, R&D Rd. II, Science-Based Industrial Park,

Hsin Chu, Taiwan, R.O.C.

- 21 -

Part Number

SPEED

POWER

FEATURE

PACKAGE

GLT41016-30J4

30ns

Normal

EDO

SOJ 400mil 40L

GLT41016-35J4

35ns

Normal

EDO

SOJ 400mil 40L

GLT41016-40J4

40ns

Normal

EDO

SOJ 400mil 40L

GLT41016-45J4

45ns

Normal

EDO

SOJ 400mil 40L

GLT41016-30TC

30ns

Normal

EDO

TSOP 400mil 44L

GLT41016-35TC

35ns

Normal

EDO

TSOP 400mil 44L

GLT41016-40TC

40ns

Normal

EDO

TSOP 400mil 44L

GLT41016-45TC

45ns

Normal

EDO

TSOP 400mil 44L

Parts Numbers (Top Mark) Definition :

GLT 4 10

16 - 40 J4

Note : CÙCDROM , HÙHDD.

Example :

1.GLT710008-15T

1Mbit(128Kx8)15ns 5V SRAM PDIP(300mil)Package type.

2.GLT44016-40J4

4Mbit(256Kx16)40ns 5V DRAM SOJ(400mil)Package type.

4 : DRAM

6 : Standard

SRAM

7 : Cache SRAM

8 : Synchronous

Burst SRAM

-SRAM

064 : 8K

256 : 256K

512 : 512K

100 : 1M

-DRAM

10 : 1M(C/EDO)*

11 : 1M(C/FPM)*

12 : 1M(H/EDO)*

13 : 1M(H/FPM)*

20 : 2M(EDO)

21 : 2M(FPM)

40 : 4M(EDO)

41 : 4M(FPM)

80 : 8M(EDO)

81 : 8M(FPM)

*See note

VOLTAGE

Blank : 5V

L : 3.3V

M : Mix Voltage

CONFIG.

04 : x04

08 : x08

16 : x16

32 : x32

SPEED

-SRAM

12 : 12ns

15 : 15ns

20 : 20ns

70 : 70ns

-DRAM

35 : 35ns

40 : 40ns

45 : 45ns

50 : 50ns

60 : 60ns

PACKAGE

T : PDIP(300mil)

TS : TSOP(Type I)

TC : TSOP(Type ll)

PL : PLCC

FA : 300mil SOP

FB : 330mil SOP

FC : 445mil SOP

J3 : 300mil SOJ

J4 : 400mil SOJ

P : PDIP(600mil)

Q : PQFP

TQ : TQFP

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