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T0501MB датащи(PDF) 2 Page - Chip Integration Technology Corporation

номер детали T0501MB
подробное описание детали  Low Capacitance ESD Protection Device
PDF  7 Pages
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производитель  CITC [Chip Integration Technology Corporation]
домашняя страница  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

T0501MB датащи(HTML) 2 Page - Chip Integration Technology Corporation

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2
Absolute Maximum Rating
Symbol
Parameter
Value
Units
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
±30
±30
kV
TOPT
Operating Temperature
-55 /+125
o
C
TSTG
Storage Temperature
-55 /+150
C
Electrical Characteristics (T=25 C)
Symbol
Parameter
VRWM
Nominal Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VBR
Reverse Breakdown Voltage @ IT
IT
Test Current for Reverse Breakdown
VC
Clamping Voltage @ I PP
IPP
Peak Pulse Current
CESD
Parasitic Capacitance
VR
Reverse Voltage
f
Small Signal Frequency
V
I
VRWM
VBR
VC
IPP
IR
IT
VRWM VBR VC
IPP
IR
IT
Bi-Directional TVS
Symbol
Test Condition
Minimum
Typical
Maximum
Units
VRWM
5.0
V
IR
VRWM = 5V, T = 25 C
Between I/O1 and I/O2
0.1
1.0
μA
VBR
IT = 1mA
Between I/O1 and I/O2
5.5
8.0
V
VC
IPP = 1A, tp= 8/20μs
Between I/O1 and I/O2
10
V
6.0
o
o
Low Capacitance ESD Protection Device
T0501MB
Chip Integration Technology Corporation
CESD
VR = 0V, f = 1MHz
Between I/O1 and I/O2
12
15
pF
VC
IPP = 4A, tp= 8/20μs
Between I/O1 and I/O2
15
V
Document ID : DS-22V14
Revised Date : 2017/05/02
Revision : C



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