2SC3824A datasheet(1/4 Pages) PANASONIC

номер детали	2SC3824A

подробное описание детали	Silicon NPN triple diffusion planar type

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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Power Transistors

1

Publication date: March 2003

SJD00113AED

2SC3824, 2SC3824A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) V

CBO

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C = 25°C ± 3°C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

900

V

Collector-emitter voltage (E-B short)

VCES

900

V

Collector-emitter voltage 2SC3824

VCEO

800

V

(Base open)

2SC3824A

900

Emitter-base voltage (Collector open)

VEBO

7V

Collector current

IC

1A

Peak collector current

ICP

2A

Collector power

PC

15

W

dissipation

Ta = 25°C

1.3

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage

2SC3824

VCEO

IC

= 1 mA, I

B

= 0

800

V

(Base open)

2SC3824A

900

Collector-base cutoff current (Emitter open)

ICBO

VCB = 900 V, IE = 050

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= 7 V, I

C

= 050

µA

Forward current transfer ratio

hFE1

VCE = 5 V, IC = 0.05 A

6



hFE2

VCE = 5 V, IC = 0.5 A

3

Collector-emitter saturation voltage

VCE(sat)

IC

= 0.2 A, I

B

= 0.04 A

1.5

V

Base-emitter saturation voltage

VBE(sat)

IC = 0.2 A, IB = 0.04 A

1.0

V

Transition frequency

fT

VCE = 10 V, IC = 0.05 A, f = 1 MHz

4

MHz

Turn-on time

ton

IC

= 0.2 A

1.0

µs

Storage time

tstg

IB1 = 0.04 A, IB2 = − 0.08 A

3.0

µs

Fall time

tf

VCC = 250 V

1.0

µs

7.0±0.3

3.5±0.2

0˚ to 0.15˚

3.0±0.2

2.0±0.2

1.1±0.1

0.75±0.1

0.9±0.1

0˚ to 0.15˚

0.4±0.1

2.3±0.2

4.6±0.4

123

1: Base

2: Collector

3: Emitter

I-G1 Package

Note) Self-supported type package is also prepared.

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