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MJU07N60CT датащи(PDF) 2 Page - Chip Integration Technology Corporation

номер детали MJU07N60CT
подробное описание детали  600V Super Junction Power MOSFET
PDF  7 Pages
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производитель  CITC [Chip Integration Technology Corporation]
домашняя страница  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

MJU07N60CT датащи(HTML) 2 Page - Chip Integration Technology Corporation

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O
■ Electrical characteristics(T = 25 C unless otherwise specified)
J
PARAMETER
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Reverse Transfer Capacitance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Threshold Voltage
PARAMETER
PARAMETER
■ Dynamic Characteristics(note:5)
■ Reverse Diode Characteristics
V
= 0V, I = 250µA
G S
D
CONDITIONS
Symbol
V
( B R ) D S S
I
D S S
MIN.
600
TYP.
MAX.
UNIT
µA
I
G S S
580
±100
1
3
V
V
= 600V, V
= 0V, T = 25°C
D S
G S
J
V
= 600V, V
= 0V, T = 150°C
D S
G S
J
V
= ±30V, V
= 0V
G S
D S
C
o s s
C
r s s
pF
C
i s s
2.2
464
552
V
= 25V, V
= 0V, F = 1MHz
D S
G S
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
V
Q
r r
V
S D
2.0
190
0.9
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
V
= V , I = 250µA
G S
D S
D
V
G S ( t h )
2
4
Drain to Source On Resistance
V
= 10V, I = 3.5A
G S
D
V
= 0V, V
open, f=1MHz
G S
D S
R
D S ( o n )
520
2.9
I =3.5A, V
= 0V
F
G S
V =300V, I =3.5A, dI /dt = 100A/μs
R
F
F
t
r r
µC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
= 400, I = 3.5A,V =10V R =10Ω
D D
D
G S
G
ns
27
27
23
22
mΩ
ns
t
d ( o n )
t
r
t
d ( o ff )
t
f
nA
10
Gate Resistance
R
G
Ω
■ Static Characteristics
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
V
= 480V, I = 3.5A V =10V
D D
D
G S
Q
g
Q
g s
Q
g d
10
2.7
2.6
nC
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Document ID : DS-22M82
Revised Date : 2015/12/11
Revision : C
MJU07N60CT
600V Super Junction Power MOSFET
Chip Integration Technology Corporation



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