EC736007 datasheet(2/5 Pages) E-CMOS

2 / 5 page

EC736007

-50V、

、

、-130mA P-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 5

5D16-Rev.F001

Electrical Characteristics (TA=25℃

℃

℃ unless otherwise noted)

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-50

—

VGS = 0V, ID = -10µA

RDS(on)

Static Drain-to-Source on-resistance

—

2.1

VGS=-10V,ID = -130mA

VGS(th)

Gate threshold voltage

-0.8

—

-2

VDS = VGS, ID = -1mA

—

-0.1

VDS =-40V,VGS = 0V

-1

IDSS

Drain-to-Source leakage current

—

-50

µA

VDS =-50V,VGS = 0V

TJ = 125°C

—

VGS =20V

IGSS

Gate-to-Source forward leakage

—

-10

VGS = -20V

gfs

Forward Transconductance

—

VDS =-25 V ,ID =-130m A

Ciss

Input Capacitance

—

Coss

Output Capacitance

—

Crss

Reverse Transfer Capacitance

—

VGS = 0;

VDS = -5 V;

f = 1 MHz

td(on)

Turn–On Delay Time

—

3.1

—

Rise Time

—

1.3

—

td(off)

Turn–Off Delay Time

—

Fall Time

—

7.5

—

VDD = –15V;

ID = –2.5 A;

RL = 50ohm

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

130

ISM

Pulsed Source Current

(Body Diode)

—

520

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

-1.3

IS=-130mA, VGS=0V

Notes:

①

Calculated continuous current based on maximum allowable junction temperature.

②

Repetitive rating; pulse width limited by max. junction temperature.

③

The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.

④

The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C

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