BPV10NF-CS21 datasheet(2/5 Pages) VISHAY

2 / 5 page

BPV10NF

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 29-May-15

Document Number: 81503

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

1.0

1.3

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

Reverse dark current

VR = 20 V, E = 0

Iro

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

Open circuit voltage

Ee = 1 mW/cm2,  = 870 nm

450

Short circuit current

Ee = 1 mW/cm2,  = 870 nm

μA

Reverse light current

Ee = 1 mW/cm2,  = 870 nm, VR = 5 V

Ira

μA

Ee = 1 mW/cm2,  = 950 nm, VR = 5 V

Ira

μA

Temperature coefficient of Ira

Ee = 1 mW/cm2,  = 870 nm, VR = 5 V

TKIra

-0.1

%/K

Absolute spectral sensitivity

VR = 5 V,  = 870 nm

)0.55

A/W

Angle of half sensitivity



± 20

deg

Wavelength of peak sensitivity



940

Range of spectral bandwidth



0.5

790 to 1050

Quantum efficiency

 = 950 nm



Noise equivalent power

VR = 20 V,  = 950 nm

NEP

3 x 10-14

Hz

Detectivity

VR = 20 V,  = 950 nm

3 x 1012

Hz/W

Rise time

VR = 50 V, RL = 50 ,  = 820 nm

2.5

Fall time

VR = 50 V, RL = 50 ,  = 820 nm

2.5

100

1000

amb - Ambient Temperature (°C)

100

94 8436

R = 20 V

204060

0.6

0.8

1.0

1.2

1.4

amb - Ambient Temperature (°C)

100

94 8621

R = 5 V

e =1 mW/cm

λ = 870 nm

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