EC747N65AFR datasheet(2/6 Pages) E-CMOS

номер детали	EC747N65AFR

подробное описание детали	650V,7A N-Channel Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

производитель	E-CMOS [E-CMOS Corporation]

домашняя страница	http://www.ecmos.com.tw/

Logo

2 / 6 page

EC747N65

650V,7A N-Channel Power MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 6

4J06N-Rev.F001

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID

= 250μA

650

IDSS

Zero Gate Voltage Drain Current

VDS = 650V, VGS = 0V

μ A

IGSSF

Forward Gate Body Leakage

Current

VDS = 0V, VGS = 30V

100

IGSSR

Reverse Gate Body Leakage

Current

VDS = 0V, VGS = -30V

-100 nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID

= 250μA

2.0

2.91

4.0

RDS(on) Static Drain-Source On-Resistance

VGS = 10V, ID = 3.5A

0.93 1.2

Ciss

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

1272

Coss

Output Capacitance

173

Crss

Reverse Transfer Capacitance

27.1

td(on)

Turn-On Delay Time

VDD = 325V, ID = 7A

= 10Ω,

VGS = 10V

- 28.7

Turn-On Rise Time

8.4

td(off)

Turn-Off Delay Time

- 49.3

Turn-Off Fall Time

134

Total Gate Charge

VDS = 325V, ID = 7A

VGS = 10V

- 32.5

Qgs

Gate-Source Charge

9.6

Qgd

Gate-Drain Charge

- 13.7

Electrical Characteristics( TJ = 25°C unless otherwise noted)

■ Off Characteristics

■ On Characteristics

■ Dynamic Characteristics

■ Switching Characteristics

EC747N65AFR датащи(PDF) 2 Page - E-CMOS Corporation

EC747N65AFR датащи(HTML) 2 Page - E-CMOS Corporation

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL