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EC2621 датащи(PDF) 4 Page - E-CMOS Corporation

номер детали EC2621
подробное описание детали  Micropower CMOS Output Hall Effect Switch
PDF  7 Pages
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производитель  E-CMOS [E-CMOS Corporation]
домашняя страница  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC2621 датащи(HTML) 4 Page - E-CMOS Corporation

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EC2621
Micropower CMOS Output Hall Effect Switch
E-CMOS Corp. (www.ecmos.com.tw))
Page 4 of 7
5F08N-Rev. F006
Electrical Specifications
DC Operating Parameters：TA=25℃, VDD=1.8V
Magnetic Specifications
DC Operating Parameters：TA=25℃, VDD=1.8V
Output Behavior versus Magnetic Polar
DC Operating Parameters：TA = -40 to 85℃, VDD =1.8V to 3.5V
Parameters
Test Conditions
Min
Typ
Max
Units
Supply Voltage,(VDD)
Operating
1.65
3.5
V
Supply Current,(IDD)
Awake State
1.4
3
mA
Sleep State
3.6
7
μA
Average
5
10
μA
Output Leakage Current,(Ioff)
Output off
1
uA
Output High Voltage,(VOH)
IOUT=0.5mA(Source)
VDD-
0.12
V
Output Low Voltage,(VOL)
IOUT=0.5mA(Sink)
0.12
V
Awake mode time,(TAW)
Operating
40
80
uS
Sleep mode time,(TSL)
Operating
40
80
mS
Duty Cycle,(D,C)
0.1
%
Electro-Static Discharge
HBM
4
KV
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Operating
Point
BOPS
S pole to branded side, B > BOP, Vout On
30
55
Gauss
BOPN
N pole to branded side, B > BOP, Vout On
-55
-30
Gauss
Release
Point
BRPS
S pole to branded side, B < BRP, Vout Off
10
20
Gauss
BRPN
N pole to branded side, B < BRP, Vout Off
-20
-10
Gauss
Hysteresis
BHYS
|BOPx - BRPx|
10
Gauss
Parameter
Test condition
OUT(TSOT23-3L)
Test condition
OUT(SOT553)
South pole
B<Bop[(-55)~(-10)]
Low
B<Bop[(-55)~(-10)]
Low
Null or weak magnetic field
B=0 or B < BRP
High
B=0 or B < BRP
High
North pole
B>Bop(55~10)
Low
B>Bop(55~10)
Low
Parameter
Test condition
OUT(TSOT23-3L)
Test condition
OUT(SOT553)
South pole
B<Bop[(-55)~(-10)]
Low
B<Bop[(-55)~(-10)]
Low



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