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ECT25S40 датащи(PDF) 28 Page - E-CMOS Corporation

номер детали ECT25S40
подробное описание детали  4M BIT SPI NOR FLASH
PDF  46 Pages
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производитель  E-CMOS [E-CMOS Corporation]
домашняя страница  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

ECT25S40 датащи(HTML) 28 Page - E-CMOS Corporation

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4L08N-Rev.F001
ECT25S40
4M BIT SPI NOR FLASH
this time duration the device will resume normal operation and other instruction will be
accepted. If the Release from Power-Down/Device ID instruction is issued while an Erase,
Program or Write cycle is
in
process(when WIP equal 1) the instruction is ignored
and
will not have any effects on the current cycle.
Figure 23a. Release Power-Down Sequence Diagram
Figure 23b. Release Power-Down/Read Device ID Sequence Diagram
Read Security Registers (48H)
See Figure 24, the Read Security Registers instruction is similar to Fast Read instruction.
The instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being
latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted
out on SO, each bit being shifted out, at a Max frequency fC, during the falling edge of
SCLK.
The first byte addressed can be at any location. The address is automatically incremented
to
the next higher address after each byte of data is shifted out. Once the A9-A0 address reaches
the last byte of the register (Byte 3FFH), it will reset to 000H, the instruction is completed by
driving /CS high.
Address
A23-A16
A15-A8
A7-A0
Security Registers 1
00H
01H
Byte Address
Security Registers 2
00H
02H
Byte Address
Security Registers 3
00H
03H
Byte Address



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