5

TUSB213-Q1

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SLLSF06 – SEPTEMBER 2017

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

UNIT

RGY (VQFN)

14 PINS

Junction-to-ambient thermal resistance

49.1

°C/W

Junction-to-case (top) thermal resistance

52.8

°C/W

Junction-to-board thermal resistance

24.2

°C/W

Junction-to-top characterization parameter

2.2

°C/W

Junction-to-board characterization parameter

24.3

°C/W

Junction-to-case (bottom) thermal resistance

7

°C/W

6.5 Electrical Characteristics

over operating free-air temperature and voltage range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER

S

High-speed active curent

USB channel = HS mode; 480 Mbps

Boost = 60 mV

18

30

mA

High-speed idle current

mV

13

22

mA

_HS

High-speed suspend current

0.76

1.5

mA

Full/Low speed current

USB channel = FS mode or LS mode;

0.77

1.5

mA

ECT

Disconnect current

Host side application; No device

0.86

1.5

mA

Disable current

= 5V

22

80

µA

Pin fail-safe leakage current for SDA,

SCL, DC_BOOST, DxP/N, RSTN

40

µA

RSTN

High-level input voltage

2

3.6

V

Low-level input voltage

0

0.8

V

High-level input current

-4

4

µA

Low-level input current

-11

11

µA

EQ

External pull-down resistor on EQ pin.

AC Boost Level 0

160

Ω

AC Boost Level 1

1.4

2

kΩ

AC Boost Level 2

3.7

3.9

kΩ

AC Boost Level 3

6

kΩ

CD, ENA_HS

High-level output voltage

2.4

V

Low-level output voltage

0.4

V

SCL, SDA

I2C Bus capacitance

4

150

pF

SDA and SCL input high level voltage

2

3.6

V

SDA and SCL input Low level voltage

0.8

V

SDA low-level output voltage

4.7k

0.4

V

SDA Low level output current

1.1

mA

DC_BOOST