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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BCP040T датащи(PDF) 1 Page - BeRex Corporation |
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BCP040T датащи(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  BCP040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm) The BeRex BCP040T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 400 micron gate width making the product ideally suited for applications requiring high-gain and medium power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCP040T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability PRODUCT FEATURES • 26 dBm Typical Output Power • 14 dB Typical Power Gain @ 12 GHz • 0.25 X 400 Micron Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel • Test & Measurement DC CHARACTERISTICS Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS MIN. TYPICAL MAX. UNIT Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 80 120 160 mA Gm Transconductance (Vds = 3V, Vgs = 50% Idss) 160 mS Vp Pinch-off Voltage (Ids = 400 µA, Vds = 2V) -1.1 V BVgd Drain Breakdown Voltage (Igd = 0.4 mA, source open) -16 V BVgs Source Breakdown Voltage (Ig = 0.4 mA, drain open) -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 120 °C/W ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 24.5 23.5 26.0 25.0 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 13.0 9.0 14.0 10.0 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 65 65 % NF Noise Figure (Vds = 2V, Ids = 10mA) 12 GHz 1.0 dB www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 January 2015 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 |
Аналогичный номер детали - BCP040T |
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Аналогичное описание - BCP040T |
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