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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BCP240T датащи(PDF) 1 Page - BeRex Corporation |
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BCP240T датащи(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm) The BeRex BCP240T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 2400 micron gate width making the product ideally suited for amplifier applications where high-gain and medium power from DC to 26 GHz. The product may be used in either wideband or narrow-band applications. The BCP240T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability. PRODUCT FEATURES • 34 dBm Typical Output Power • 10 dB Typical Gain @12 GHz • 58% PAE Typical @12 GHz • 0.25 X 2400 µm Recessed Gate APPLICATIONS • Commercial • Military / Hi-Rel. • Test & Measurement DC CHARACTERISTICS Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS MIN. TYPICAL MAX. UNIT Idss Saturated Drain Current (Vgs = 0V, Vds = 1.2V) 480 720 960 mA Gm Transconductance (Vds = 2V, Vgs = 50% Idss) 960 mS Vp Pinch-off Voltage (Ids = 2.4 mA, Vds = 2V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Ig = 2.4 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 2.4 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 23 ° C/W ELECTRICAL CHARACTERISTICS (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 33.5 34.8 33.7 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 9.0 10.2 7.7 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 58 42 % BCP240T www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 January 2015 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.7 |
Аналогичный номер детали - BCP240T |
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Аналогичное описание - BCP240T |
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