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2SB1502 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1502 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION · High DC Current Gain- : hFE= 5000(Min)@IC= -4A · Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A · Complement to Type 2SD2275 · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power amplifier applications · Optimum for 55W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 60 W Collector Power Dissipation @ Ta=25℃ 3.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SB1502 |
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Аналогичное описание - 2SB1502 |
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